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PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 -- 27 March 2009 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features and benefits
Fast switching Low on-state resistance Low recovered charge
1.3 Applications
AC-to-DC converters secondary side Class D amplifiers DC-to-DC converters Motion control
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 C; VGS = 10 V; see Figure 1; see Figure 3 Tmb = 25 C; see Figure 2 Min Typ Max 75 75 250 Unit V A W drain-source voltage Tj 25 C; Tj 150 C drain current total power dissipation recovered charge Symbol Parameter
Source-drain diode Qr VGS = 0 V; IS = 5 A; dIS/dt = 150 A/s; VDS = 12 V VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11; see Figure 10 56 nC
Static characteristics RDSon drain-source on-state resistance 4.1 5 m
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol G D S D Description gate drain source drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
123
SOT78 (TO-220AB; SC-46)
3. Ordering information
Table 3. Ordering information Type number Package Name Description Version PHP165NQ08T TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
2 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS = 10 V; Tmb = 100 C; see Figure 1 VGS = 10 V; Tmb = 25 C; see Figure 1; see Figure 3 IDM Ptot Tstg Tj VGSM peak drain current total power dissipation storage temperature junction temperature peak gate-source voltage source current peak source current pulsed; tp 50 s; = 25 %; Tj 150 C tp 10 s; pulsed; Tmb = 25 C; see Figure 3 Tmb = 25 C; see Figure 2 Conditions Tj 25 C; Tj 150 C Tj 150 C; Tj 25 C; RGS = 20 k Min -20 -55 -55 -30 Max 75 75 20 75 75 400 250 150 150 30 Unit V V V A A A W C C V
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode IS ISM EDS(AL)S Tmb = 25 C tp 10 s; pulsed; Tmb = 25 C 75 400 500 A A mJ
Avalanche ruggedness non-repetitive VGS = 10 V; Tj(init) = 25 C; ID = 75 A; Vsup = 15 V; drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 energy non-repetitive VGS = 10 V; Vsup = 15 V; RGS = 50 ; drain-source avalanche Tj(init) = 25 C; unclamped current
IDS(AL)S
-
75
A
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
3 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
125 Ider (%) 100
003aac592
120 Pder (%) 80
003aac591
75
50 40 25
0 0 50 100 150 Tj (C) 200
0 0 50 100 150 Tj (C) 200
Fig 1.
Normalized continuous drain current as a function of mounting base temperature
Fig 2.
Normalized total power dissipation as a function of mounting base temperature
003aac600
103 ID (A) 102 Limit RDSon = VDS / ID
tp = 10 s 100 s DC 1 ms 10 ms 100 ms
10
1
10-1 10-1
1
10
VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
4 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter Conditions Min Typ Max 0.5 Unit K/W thermal resistance from see Figure 4 junction to mounting base thermal resistance from vertical in still air junction to ambient
Rth(j-a)
-
60
-
K/W
1 Zth(j-mb) (K/W) 0.5
003aac601
10-1
0.2 0.1 0.05 0.02 single pulse
tp T t tp T
P
=
10-2 10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
5 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 1 mA; VDS = VGS; Tj = 150 C; see Figure 8 ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 8; see Figure 9 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 8 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 75 V; VGS = 0 V; Tj = 25 C VDS = 75 V; VGS = 0 V; Tj = 150 C VGS = 20 V; VDS = 0 V; Tj = 25 C VGS = -20 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 25 A; Tj = 150 C; see Figure 10; see Figure 11 VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 11; see Figure 10 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 15 IS = 5 A; dIS/dt = 150 A/s; VGS = 0 V; VDS = 12 V VDS = 15 V; RL = 1.25 ; VGS = 10 V; RG(ext) = 6 ; Tj = 25 C ID = 75 A; VDS = 60 V; VGS = 10 V; Tj = 25 C; see Figure 12; see Figure 13 VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 C; see Figure 14 165 32 50 8250 920 570 48 67 144 74 0.8 49 56 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC Min 67 75 1.1 2 Typ 3 0.02 10 10 8.9 4.1 Max 4 4.4 1 500 100 100 11 5 Unit V V V V V A A nA nA m m
Static characteristics
Source-drain diode
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
6 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
300 ID (A) 240 7.5 V 8V 8.5 V 10 V 180 20 V
003aac603
100 ID (A) 75
003aac593
7V 6.5 V
6V 50
120 5.5 V 25 60 VGS = 5 V 0 0 0.5 1 1.5 VDS (V) 2 0 0 2
Tj = 150 C
25 C
4
VGS (V)
6
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values
003aac597
Fig 6.
Transfer characteristics: drain current as a function of gate-source voltage; typical values
5
003aac594
105 C (pF)
VGS(th) (V) 4
max
Ciss 104 Crss
3
typ
2
min
1
103 10-1
1
VGS (V)
10
0 -60
0
60
120
Tj (C)
180
Fig 7.
Input and reverse transfer capacitances as a function of gate-source voltage; typical values
Fig 8.
Gate-source threshold voltage as a function of junction temperature
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
7 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
10-1 ID (A) 10-2
003aac595
16 RDSon (m ) 12 VGS = 5 V
003aac602
5.5 V
6V 10
-3
min
typ
max
8 6.5 V
10-4
4 10 V 8.5 V 8V 7.5 V 7 V
10-5 0 2 4 VGS (V) 6
0 0 60 120 180 240 ID (A) 300
Fig 9.
Sub-threshold drain current as a function of gate-source voltage
2.5
03aj03
Fig 10. Drain-source on-state resistance as a function of drain current; typical values
a 2
VDS ID VGS(pl) 1.5 VGS(th) 1 VGS QGS1 0.5 QGS2 QGD QG(tot)
003aaa508
QGS
0 -60
0
60
120 Tj (C)
180
Fig 12. Gate charge waveform definitions
Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
8 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
10 VGS (V) 7.5 ID = 75A Tj = 25 C 14 V
003aac599
105 C (pF) 104
003aac596
Ciss
VDS = 60 V 5
103 2.5
Coss Crss
0 0 50 100 150 QG (nC) 200
102 10-1
1
10
VDS (V)
102
Fig 13. Gate-source voltage as a function of gate charge; typical values
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
003aac598
100 IS (A) 75
50
25
Tj = 150 C
25 C
0 0 0.25 0.5 0.75 VSD (V) 1
Fig 15. Source current as a function of source-drain voltage; typical values
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
9 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2(1) Q
L
b1(2) (3x) b2(2) (2x)
1 2 3
b(3x) e e
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1(1) 3.30 2.79 L2(1) max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
Fig 16. Package outline SOT78 (TO-220AB)
PHP165NQ08T_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
10 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7. Revision history Release date 20090327 Data sheet status Product data sheet Product data sheet Change notice Supersedes PHP165NQ08T_1 Document ID PHP165NQ08T_2 Modifications: PHP165NQ08T_1
*
Maximum value of thermal resistance from junction to mounting base updated.
20090310
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
11 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PHP165NQ08T_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 27 March 2009
12 of 13
NXP Semiconductors
PHP165NQ08T
N-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 March 2009 Document identifier: PHP165NQ08T_2

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